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1

A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Qimeng Jiang, Minzhi Wang, Xingbi Chen

Journal:

IEEE Transactions on Electron Devices

Année:

2010

Langue:

english

Fichier:

PDF, 821 KB

english, 2010

2

Vertical Power ${\rm H}k$-MOSFET of Hexagonal Layout

Lyu, Xinjiang, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 886 KB

english, 2013

3

New Planar Junction Edge Termination Technique Using OPTVLD With a Buried Layer

Cheng, Junji, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 539 KB

english, 2013

4

Optimization of Specific on-Resistance of Semisuperjunction Trench MOSFETs with Charge Balance

Huang, Haimeng, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.40 MB

english, 2013

5

Novel reverse conducting insulated gate bipolar transistor with anti-parallel MOS controlled thyristor

Zhu, Liheng, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2014

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2014

6

Novel technique for lateral high-voltage totem-pole power devices

Chen, Xingbi, Kong, Moufu

Journal:

IET Power Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 787 KB

english, 2014

7

[IEEE 2016 IEEE International Nanoelectronics Conference (INEC) - Chengdu, China (2016.5.9-2016.5.11)] 2016 IEEE International Nanoelectronics Conference (INEC) - Study on a novel junction edge termination for HK-MOSFET

Sun, Xu, Huang, Mingmin, Chen, Xingbi

Année:

2016

Langue:

english

Fichier:

PDF, 248 KB

english, 2016

8

Low on-state voltage and saturation current Trench Insulated Gate Bipolar Transistor with integrated Zener diode

Li, Ping, Cheng, Junji, Chen, Xingbi

Journal:

Electronics Letters

Année:

2017

Langue:

english

Fichier:

PDF, 477 KB

english, 2017

9

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Yi, Bo, Lin, Jia, Wu, Jiayu, Kong, Moufu, Chen, Xingbi

Journal:

IEEE Journal of the Electron Devices Society

Année:

2019

Langue:

english

Fichier:

PDF, 1.88 MB

english, 2019

10

Increasing breakdown voltage of LDMOST using buried layer

Lei Han, Xingning Ye, Xingbi Chen

Journal:

Journal of Electronics (China)

Année:

2003

Langue:

english

Fichier:

PDF, 287 KB

english, 2003

11

A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ Insulator

Chen, Xingbi, Huang, Mingmin

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 710 KB

english, 2012

12

[IEEE 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Kanazawa (2013.5.26-2013.5.30)] 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A novel snapback-free reverse conducting IGBT with anti-parallel Shockley diode

Liheng Zhu,, Xingbi Chen,

Année:

2013

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2013

13

Study on HK-VDMOS with Deep Trench Termination

Yi, Bo, Lin, Zhi, Chen, Xingbi

Journal:

Superlattices and Microstructures

Année:

2014

Langue:

english

Fichier:

PDF, 1.62 MB

english, 2014

14

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Zhu, Liheng, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2012

Langue:

english

Fichier:

PDF, 750 KB

english, 2012

15

An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions

Lyu, Xinjiang, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2013

16

A new high-voltage level-shifting circuit for half-bridge power ICs

Kong, Moufu, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 571 KB

english, 2013

17

New expressions for non-punch-through and punch-through abrupt parallel-plane junctions based on Chynoweth law

Huang, Haimeng, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 774 KB

english, 2013

18

A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates

Lin, Zhi, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Année:

2015

Langue:

english

Fichier:

PDF, 1.04 MB

english, 2015

19

An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split Gate

Du, Wenfang, Lyu, Xinjiang, Ng, Wai Tung, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 1.46 MB

english, 2015

20

Theory of an improved vertical power MOSFET using high-k insulator

Huang, Mingmin, Chen, Xingbi

Journal:

Superlattices and Microstructures

Année:

2015

Langue:

english

Fichier:

PDF, 976 KB

english, 2015

21

[IEEE 2015 IEEE 11th International Conference on Power Electronics and Drive Systems - Sydney, Australia (2015.6.9-2015.6.12)] 2015 IEEE 11th International Conference on Power Electronics and Drive Systems - A new super-junction VDMOS realizing fast reverse recovery

Yi, Bo, Lyu, Xinjiang, Chen, Xingbi

Année:

2015

Langue:

english

Fichier:

PDF, 1.48 MB

english, 2015

22

Vertical power Schottky barrier diodes using a high- k insulator

Huang, Mingmin, Chen, Xingbi

Journal:

Semiconductor Science and Technology

Année:

2015

Langue:

english

Fichier:

PDF, 1.96 MB

english, 2015

23

A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS

Li, Ping, Lyu, Xinjiang, Cheng, Junji, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.11 MB

english, 2016

24

[IEEE 2015 IEEE 11th International Conference on ASIC (ASICON ) - Chengdu, China (2015.11.3-2015.11.6)] 2015 IEEE 11th International Conference on ASIC (ASICON) - A novel SCR-LDMOS for high voltage ESD protection

Jing, Deng, Xingbi, Chen

Année:

2015

Langue:

english

Fichier:

PDF, 2.30 MB

english, 2015

25

An LDMOS with large SOA and low specific on-resistance

Du, Wenfang, Lyu, Xinjiang, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2016

Langue:

english

Fichier:

PDF, 667 KB

english, 2016

26

A superjunction structure using high- k insulator for power devices: theory and optimization

Mingmin, Huang, Xingbi, Chen

Journal:

Journal of Semiconductors

Année:

2016

Langue:

english

Fichier:

PDF, 1.27 MB

english, 2016

27

A TIGBT with Floating N-well region for High dV/dt controllability and low EMI noise

Li, Ping, Cheng, Junji, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Année:

2018

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2018

28

A 600-V Super-Junction pLDMOS Utilizing Electron Current to Enhance Current Capability

Yi, Bo, Kong, Moufu, Lin, Jia, Cheng, Junji, Huang, Haimeng, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Langue:

english

Fichier:

PDF, 2.61 MB

english, 2019

29

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A Positive Low-Voltage Power Supply Integrated With High-Voltage Devices

Zhang, Bingke, Kong, Moufu, Chen, Wenzhen, Chen, Xingbi

Année:

2019

Langue:

english

Fichier:

PDF, 133 KB

english, 2019

30

[IEEE 2019 IEEE 13th International Conference on ASIC (ASICON) - Chongqing, China (2019.10.29-2019.11.1)] 2019 IEEE 13th International Conference on ASIC (ASICON) - Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability

Chen, Rongxin, Yi, Bo, Kong, Moufu, Chen, Xingbi

Année:

2019

Fichier:

PDF, 355 KB

2019

31

Study on Dual Channel n-p-LDMOS Power Devices With Three Terminals

Kong, Moufu, Du, Wenfang, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 970 KB

english, 2013

32

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - Low specific on-resistance p-type OPTVLDLDMOS with double hole-conductive paths for SPIC application

Cheng, Junji, Chen, Xingbi

Année:

2012

Langue:

english

Fichier:

PDF, 887 KB

english, 2012

33

[IEEE 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Bruges, Belgium (2012.06.3-2012.06.7)] 2012 24th International Symposium on Power Semiconductor Devices and ICs - A novel high voltage start-up current source for SMPS

Hu, Hao, Lin, Zhi, Chen, Xingbi

Année:

2012

Langue:

english

Fichier:

PDF, 623 KB

english, 2012

34

A Novel Isolation Method for Half-Bridge Power ICs

Kong, Moufu, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 896 KB

english, 2013

35

Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric

Li, Junhong, Li, Ping, Huo, Weirong, Zhang, Guojun, Zhai, Yahong, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Année:

2011

Langue:

english

Fichier:

PDF, 246 KB

english, 2011

36

An Improved Superjunction Structure With Variation Vertical Doping Profile

Lin, Zhi, Huang, Haimeng, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2015

37

A novel high speed lateral IGBT with a self-driven second gate

Hu, Hao, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2012

Langue:

english

Fichier:

PDF, 230 KB

english, 2012

38

Novel high-voltage, high-side and low-side power devices with a single control signal

Kong, Moufu, Chen, Xingbi

Journal:

Journal of Semiconductors

Année:

2013

Langue:

english

Fichier:

PDF, 71 KB

english, 2013

39

Snapback-free reverse-conducting IGBT with low turnoff loss

Lin, Zhi, Chen, Xingbi, Yi, Bo

Journal:

Electronics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 514 KB

english, 2014

40

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Study on layouts design of the voltage sustaining layer using high-k insulator

Huang, Mingmin, Chen, Xingbi

Année:

2014

Langue:

english

Fichier:

PDF, 982 KB

english, 2014

41

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current

Li, Ping, Kong, Moufu, Chen, Xingbi

Année:

2016

Langue:

english

Fichier:

PDF, 407 KB

english, 2016

42

[IEEE 2015 IEEE 11th International Conference on ASIC (ASICON ) - Chengdu, China (2015.11.3-2015.11.6)] 2015 IEEE 11th International Conference on ASIC (ASICON) - Deep trench junction termination employing variable-K dielectric for high voltage devices

Li, Huan, Chen, Xingbi

Année:

2015

Langue:

english

Fichier:

PDF, 428 KB

english, 2015

43

A new low specific on-resistance Hk-LDMOS with N-poly diode

Deng, Jing, Huang, Mingmin, Cheng, Junji, Lyu, Xinjiang, Chen, Xingbi

Journal:

Superlattices and Microstructures

Année:

2016

Langue:

english

Fichier:

PDF, 724 KB

english, 2016

44

[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A variation laterl doping layer and lightly doped region compensated superjunction LDMOS

Liang, Lixiao, Huang, Haimeng, Chen, Xingbi

Année:

2016

Fichier:

PDF, 307 KB

2016

45

[IEEE 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS) - Honolulu, HI, USA (2017.12.12-2017.12.15)] 2017 IEEE 12th International Conference on Power Electronics and Drive Systems (PEDS) - A low on-state voltage TIGBT with planar gate self-biased pMOS

Li, Ping, Huang, Haimeng, Chen, Xingbi

Année:

2017

Langue:

english

Fichier:

PDF, 381 KB

english, 2017

46

[IEEE 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hsinchu (2017.10.18-2017.10.20)] 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A novel CMOS positive to negative voltage converter and regulator

Kong, Moufu, Zhang, Bingke, Chen, Hualei, Chen, Xingbi

Année:

2017

Langue:

english

Fichier:

PDF, 316 KB

english, 2017

47

[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A High Speed High Voltage Normally-off SiC Vertical JFET Power Device

Kong, Moufu, Hou, Yunru, Yi, Bo, Chen, Xingbi

Année:

2019

Langue:

english

Fichier:

PDF, 290 KB

english, 2019

48

An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

Yi, Bo, Lin, Jia, Wu, Jiayu, Kong, Moufu, Chen, Xingbi

Journal:

IEEE Journal of the Electron Devices Society

Année:

2019

Fichier:

PDF, 1.88 MB

2019

49

A Novel Diode-Clamped Carrier Stored Trench IGBT With Improved Performances

Yi, Bo, Xie, XinTong, Kong, MouFu, Cheng, JunJi, Chen, XingBi

Journal:

IEEE Transactions on Electron Devices

Année:

2020

Fichier:

PDF, 2.41 MB

2020

50

A Novel Low on-State Voltage SOI LIGBT With Enhanced Conductivity Modulation

Zhang, Bingke, Kong, Moufu, Yi, Bo, Chen, Xingbi

Journal:

IEEE Transactions on Electron Devices

Année:

2019

Fichier:

PDF, 1.47 MB

2019